销售电阻率厚度测试仪
- 所在区域： 北京
- 价格范围： 0
- 发布日期： 2014-09-18 02:33:45
- 有 效 期： 长期有效
- 供应数量： 20
- 北京羲和阳光科技发展有限公司
- 联 系 人： 包经理
- 电 话： 010-60290891
- 移动电话： 18618315708
- 传 真： 010-60290891
- 地 址： 北京市大兴区西红门路26号明珠商务7A-306
产品简介
电阻率厚度测试仪
产品型号：进口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connectora PC.
功能特点
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from topone from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledgecan be moved simultaneously equidistant to
the center by means of a manually moved lever.
Beforebehind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer formsmisalignments. To ensure safe startfinish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement valuesto
arm/disarm measurements.
技术参数
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
产品型号：进口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connectora PC.
功能特点
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from topone from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledgecan be moved simultaneously equidistant to
the center by means of a manually moved lever.
Beforebehind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer formsmisalignments. To ensure safe startfinish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement valuesto
arm/disarm measurements.
技术参数
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
